document number: 94512 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 1 hexfred ? ultrafast diodes, 100 a (new int-a-pak power modules) vskdu162/12pbf vishay high power products features ? electrically isolated: dbc base plate ? standard jedec package ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? ul approved file e78996 ? case style new int-a-pak ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level product summary v r 1200 v v f (typical) 2.5 v t rr (typical) 150 ns i f(dc) at t c 110 a at 100 c new int-a-pak absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v continuous forward current i f t c = 25 c 205 a t c = 100 c 110 single pulse forward current i fsm limited by juncti on temperature 800 maximum power dissipation p d t c = 25 c 695 w t c = 100 c 280 rms isolation voltage v isol 50 hz, circuit to ba se, all terminal shorted, t = 1 s 3500 v operating junction and storage temperature range t j , t stg - 40 to + 150 c electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol tes t conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 100 a - 2.5 3.2 i f = 160 a - 2.9 3.9 maximum reverse leakage current i rm t j = 150 c, v r = 1200 v - 18 30 ma
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94512 2 revision: 04-may-10 vskdu162/12pbf vishay high power products hexfred ? ultrafast diodes, 100 a (new int-a-pak power modules) dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr t j = 25 c i f = 160 a di f /dt = 200 a/s v r = 200 v - 150 200 ns reverse recovery current i rrm t j = 25 c - 20 22 a reverse recovery charge q rr t j = 25 c - 2000 2400 nc peak rate of recovery current di (rec)m /dt t j = 25 c - - 300 a/s thermal - mechanical specifications parameter symbol test conditions values units junction operating and storage temperature range t j , t stg - 40 to 150 c maximum internal th ermal resistance, junction to case per leg r thjc dc operation 0.18 c/w typical thermal resistance, case to heatsink per module r thcs mounting surface flat, smooth and greased 0.05 mounting torque 10 % to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 4 nm busbar 6 approximate weight 200 g 7.1 oz. case style new int-a-pak
document number: 94512 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 3 vskdu162/12pbf hexfred ? ultrafast diodes, 100 a (new int-a-pak power modules) vishay high power products fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - maximum allowa ble case temperature vs. average forward current fig. 4 - maximum thermal impedance z thjc characteristics instantaneous forward current - i f (a) forward voltage drop - v fm (v) 1 10 100 1000 012345678 tj = 150?c tj = 25?c reverse voltage - v r (v) reverse current - i r (ma) 0.001 0.01 0.1 1 10 100 200 400 600 800 1000 1200 25?c t = 150?c j allowable case temperature (?) average forward current - i f(av) (a) 0 20 40 60 80 100 120 140 160 0408012016020 0 dc square wave (d = 0.50) t 1 , rectangular pulse duration (seconds) thermal impedance - z thjc (?/w) 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 single pulse (thermal resistance) notes: 1. duty factor d = t / t 2. peak tj = pdm x zthjc + tc d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 2 t 1 t p dm
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94512 4 revision: 04-may-10 vskdu162/12pbf vishay high power products hexfred ? ultrafast diodes, 100 a (new int-a-pak power modules) fig. 5 - forward power loss characteristics fig. 6 - typical reverse recovery time vs. di f /dt (per leg) fig. 7 - typical reverse recovery charge vs. di f /dt (per leg) fig. 8 - typical reverse recovery current vs. di f /dt (per leg) average forward current - i f(av) (a) average power loss (watts) 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 25 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 di f / dt - (a/?) t rr (ns) 100 1000 0 0 0 1 0 0 1 vr = 200v if = 160a, tj = 25?c di f / dt - (a/?) q rr (nc) 100 1000 10000 0 0 0 1 0 0 1 vr = 200v if = 160a, tj = 25?c di f / dt - (a/s) i rr (a) 10 100 0 0 0 1 0 0 1 vr = 200v if = 160a, tj = 25?c
document number: 94512 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 5 vskdu162/12pbf hexfred ? ultrafast diodes, 100 a (new int-a-pak power modules) vishay high power products ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95254 1 - vishay hpp 2 - k = new int-a-pak module 3 - du = hexfred ultrafast diode 4 - current rating 5 - voltage rating (12 = 1200 v) 6 - pbf = lead (pb)-free device code 5 13 24 6 vs k du 162 / 12 pbf - + (1) (2) (3) ~
document number: 95254 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-dec-07 1 int-a-pak dbc outline dimensions vishay semiconductors dimensions in millimeters (inches) 17 (0.67) 23 (0.91) 23 (0.91) 3 screws m6 x 10 66 (2.60) 94 (3.70) 35 (1.38) 14.5 (0.57) 1 2 3 5 4 37 (1.44) 80 (3.15) ? 6.5 (? 0.25) 30 (1.18) 9 (0.33) 28 (1.10) 7 6
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